PURPOSE: To prevent an interfacial layer with low permittivity at an interface between an insulating film and an electrode, by using a capacitive-element electrode made of metal, of which an oxide film is made of an insulating substance with permittivity larger than a given value.

CONSTITUTION: In a capacitive element, a lower electrode 2 made of 100nm tantalum(Ta), a first insulating layer 3 made of 5nm tantalum pentoxide (Ta2O5) with permittivity of 25, a second insulating layer 4 made of 25nm tantalum dioxide (TiO2) with permittivity of 100, and an upper electrode 5 made of 100nm titanium nitride (TiN) are formed on a silicon substrate 1. In this TiO2/Ta2O5/Ta laminate structure, an insulating-film layer with low permittivity is not produced at an interface between an electrode and a dielectric substance, and a capacitive element with large capacity can be realized. The electrode in the capacitive element is preferably made of metal with a smaller absolute value of oxide generative free energy than that of the metal that constitutes the oxide insulating substance.