PURPOSE: To enable evaluation of electrostatic damage in a charging process, by forming on a semiconductor substrate at least first and second check elements which have the same or partly the same structure as a charge retaining structure of a circuit element and differ from each other in the area of electrode pads.

CONSTITUTION: In a semiconductor device in which a circuit element having a charge retaining structure its formed on a semiconductor substrate 1, at least first and second check elements 10, 20 having the same or partly the same structure as the charge retaining structure of the circuit element are formed on the semiconductor substrate 1. The area of electrode pads 18, 19 of the first check element 10 and that of electrode pads 28, 29 of the second check element 20 differ from each other. For instance, each of the first to third check elements 10 to 30 has an Si oxide film 13 formed on a P-type Si substrate 1, Al electrode wiring 14, a P+-type contact region 17 formed in the substrate 1, and Al electrode wiring 15 connected to the contact region 17.