Title:
SEMICONDUCTOR DEVICE AND METHOD OF DRIVING SAME
Document Type and Number:
Japanese Patent JPS5324275
Kind Code:
A
Abstract:
A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.
Inventors:
HANSU PURAIDERUERU
Application Number:
JP9771077A
Publication Date:
March 06, 1978
Filing Date:
August 15, 1977
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L29/73; H01L21/331; H01L27/08; H01L27/092; H01L27/12; H01L29/70; H01L29/735; H01L29/82; H01L29/86; H01L29/861; H01L29/868; H01L43/08; (IPC1-7): H01L21/66; H01L27/12; H01L27/22; H01L29/06