SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Document Type and Number:

Japanese Patent JP2005175155

Kind Code:

A

Abstract:

To make a gate insulation film hard to be damaged when a semiconductor device is manufactured even if an antenna ratio of wiring connected to a gate electrode is high.

In a method of manufacturing the semiconductor device, an element isolation film 2 having an element region 2a and an opening 2b for electric discharge is formed on a semiconductor substrate 1, and the gate insulation film 3 is formed on the part of the element region 2a. The gate electrode 4 is formed on the gate insulation film 3, and gate ground wiring 4a extended from the gate electrode 4 to the opening 2b for the electric discharge via the element isolation film 2 is formed. An interlayer insulation film 6 is formed on the gate electrode 4, and a connection hole 6a disposed on the gate electrode 4 is formed on the interlayer insulation film 6. Wiring 10a connected to the gate electrode 4 by embedding the part in the connection hole 6a is formed on the interlayer insulation film 6. The gate ground wiring 4a is cut on the element isolation film 2.

Inventors:

HONMA TSUTOMU

Application Number:

JP2003412131A

Publication Date:

June 30, 2005

Filing Date:

December 10, 2003

Export Citation:

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Assignee:

SEIKO EPSON CORP

International Classes:

H01L21/302; H01L21/3205; H01L21/822; H01L21/8234; H01L23/52; H01L27/04; H01L27/088; H01L29/78; (IPC1-7): H01L29/78; H01L21/302; H01L21/3205; H01L21/822; H01L21/8234; H01L27/04; H01L27/088

Attorney, Agent or Firm:

Mutsumi Yanase
Masaaki Utsunomiya
Atsushi Watanabe

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