To solve the problems that, since a fuse pad and an external connection pad are provided on the same wiring layer, each pad and a wiring are densely arranged, an area of the wiring layer is increased, the number of semiconductor chips taken from one wafer is decreased, and a semiconductor chip cost is raised.
This semiconductor device comprises a first wiring layer having the external connection pad for connecting with at least an external leading terminal, a current melting type fuse provided in an optional wiring layer for changing characteristics of the semiconductor device, and a second wiring layer which is connected to the current melting type fuse, and differs from the first wiring layer having the fuse pad for abutting a terminal to which the cutting current of the current melting type fuse is applied.
Fujitsuna Hideyoshi
Osamu Suzawa