To provide a technology that reduces a cost for manufacturing a semiconductor device having a damascene wiring structure containing a copper wiring, a benzocyclobutene (BCB) insulating film, and a chromium adhered layer.
The method for manufacturing the semiconductor device having the damascene wiring structure using the copper wiring and the BCB insulating film includes a process that forms a groove for wiring in the BCB insulating film, a process that forms a chromium barrier layer on the BCB insulated film where the groove is formed, a process that forms a copper layer a part of which is to be the copper wiring on the chromium barrier layer, a process that polishes the copper layer by a chemical mechanical polishing method using a first colloidal silica series slurry, and a process that polishes the chromium barrier layer by a chemical mechanical polishing method using a second colloidal silica series slurry. The second colloidal silica series slurry is a colloidal silica series slurry containing an oxidizing agent in an alkaline solvent.
MASUDA HIDETOSHI
KONDO RYUICHI
