Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Document Type and Number:
Japanese Patent JP2007142276
Kind Code:
A
Abstract:
To efficiently radiate heat to be generated due to a semiconductor element, etc.
A semiconductor device includes a semiconductor substrate 11, a first diffusion region 12 arranged on the semiconductor substrate, the semiconductor element 17 arranged on the first diffusion region 12, and a passage 14 which is arranged on the first diffusion region 12 and to which a fluid for cooling is supplied.
Inventors:
CHIKAMATSU NAOHITO
Application Number:
JP2005336184A
Publication Date:
June 07, 2007
Filing Date:
November 21, 2005
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/822; H01L21/02; H01L21/76; H01L21/768; H01L21/8238; H01L23/473; H01L23/522; H01L27/04; H01L27/08; H01L27/092; H01L29/06; H01L29/78
Domestic Patent References:
| JPH03273669A | 1991-12-04 | |||
| JP2005167258A | 2005-06-23 | |||
| JP2002319638A | 2002-10-31 | |||
| JP2005294760A | 2005-10-20 |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto