SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Title:

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Document Type and Number:

Japanese Patent JP2007180570

Kind Code:

A

Abstract:

To provide a semiconductor device which has fewer crystal defects in the front surface region of a semiconductor substrate in which elements are formed, can securely hold data, and is low in cost, and to provide a method of manufacturing the semiconductor device thereof.

The method of manufacturing the semiconductor device includes a step of forming a germanium-containing layer in the semiconductor substrate, a step of forming a trench that reaches the germanium containing layer from the front surface of the substrate, and a step of forming a cavity by removing the germanium containing layer.

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Inventors:

FUKUZUMI YOSHIAKI

Application Number:

JP2007033223A

Publication Date:

July 12, 2007

Filing Date:

February 14, 2007

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/764; H01L21/76; H01L21/762; H01L27/10; H01L27/12; H01L29/786

Domestic Patent References:

JPS58121642A	1983-07-20
JPH0468568A	1992-03-04
JPH0210850A	1990-01-16

Attorney, Agent or Firm:

Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Akaoka Akira

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