To provide a method of manufacturing a semiconductor device where a substrate is thinned and semiconductor regions having fine patterns are formed.
The method of manufacturing the semiconductor device 101 includes: a step of forming an N-type epitaxial layer 2 on a SiC single crystal substrate 1, and then, forming P-type impurity regions 3, 4 having the fine patterns and surface ohmic contact electrodes 5 by the use of a photolithography method by a stepper; a step of forming a protective film to cover the surface ohmic contact electrodes 5 and planarizing the protective film; a substrate thinning step of thinning the SiC single crystal substrate 1; a step of forming a backside ohmic contact electrode 7 on the SiC single crystal substrate 1; a step of forming a Schottky metal part 8, which is connected to the P-type impurity regions 3, 4 and the surface ohmic contact electrodes 5, and forming a surface pad electrode 9 for covering the Schottky metal part 8.
COPYRIGHT: (C)2010,JPO&INPIT
SAKAGUCHI YASUYUKI
| JP2002314098A | 2002-10-25 | |||
| JPH0766433A | 1995-03-10 | |||
| JP2001177096A | 2001-06-29 |
Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama