To provide a semiconductor device for appropriately protecting an internal circuit while improving manufacturing efficiency, a method of manufacturing the same, and an electrostatic discharge protective element.
A first semiconductor region 21 of a first conductive type is formed on a semiconductor substrate 20, second and third semiconductor regions (22, 23) of a second conductive type are formed on its both sides, a gate electrode 32 is formed in the upper part of the first semiconductor region through an insulating film, a fourth semiconductor region 30 is formed so as to straddle the junction plane of the first semiconductor region and the third semiconductor region and to span them, a source region 26 and a drain region 28 are formed in the second and third semiconductor regions, the gate electrode and the source region are grounded, an input pad 40 connected to the internal circuit is connected to a drain region, and when a surge voltage is input in the input pad, Zener breakdown is generated between the drain region and the fourth semiconductor region and a parasitic bipolar transistor is brought into a switched on state to discharge the surge voltage.
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