To increase the wiring reliability of a laminated semiconductor device.

A first semiconductor device 11, whose first semiconductor integrated circuit 13 is formed on a first substrate 12, includes a first moisture-resistant guard ring 14 surrounding a side peripheral of a first wiring part 33 constituted of an insulating film 31 formed on the first semiconductor integrated circuit 13 and a plurality of layers of wirings 32 formed in the insulating film 31. A second semiconductor device, whose second semiconductor integrated circuit 23 is formed on a second substrate 22, includes a second moisture-resistant guard ring 24 surrounding a side peripheral of a second wiring part 43 constituted of an insulating film 41 formed on the second semiconductor integrated circuit 23 and a plurality of layers of wirings 42 formed in the insulating film 41. The first and second semiconductor devices are laminated with the first wiring part 33 in opposition to the second wiring part 43. The first guard ring 14 is joined with the second guard ring 24 on a junction surface between the first semiconductor device 11 and the second semiconductor device 12.