Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011134743
Kind Code:
A
Abstract:
To provide a high-performance semiconductor device, and a method of manufacturing the same.
The semiconductor device includes an insulating layer 1b formed on an Si substrate 1a, a first SOI layer 1c formed on the insulating layer, a back gate electrode 1c' formed by the first SOI layer, a back gate insulating layer 7a formed on the back gate electrode, a second SOI layer 3 formed on the back gate insulating layer, a front gate insulating layer formed on the second SOI layer, a front gate electrode 10 formed on the front gate insulating layer, impurity layers of each of source and drain regions formed on the second SOI layer, and wiring 16 for electrically connecting the back gate electrode to the front gate electrode.
Inventors:
MATSUZAWA YUSUKE
Application Number:
JP2009290176A
Publication Date:
July 07, 2011
Filing Date:
December 22, 2009
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L29/786
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka
Osamu Suzawa
Kazuhiko Miyasaka
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