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Title:
SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011197696
Kind Code:
A
Abstract:

To prevent a defect such as a crack from being generated when press-bonding an FPC to a device after transferred to a flexible substrate having flexibility such as a plastic film substrate.

A layer 405a including a circuit having an element, and a terminal electrode 405b are formed as a transferring layer to be separated, and a resin protection layer 405c is formed thereon to prevent the crack. An electrode face of the terminal electrode is exposed in a portion connected with the FPC. The FPC 407 is press-bonded to be connected by an anisotropic conductive film 406. A wire is protected by the protection layer 405c in the press-bonding process to prevent thereby the crack from being generated due to pressurization deformation.


Inventors:
GOTO YUGO
FUKUMOTO YUMIKO
TAKAYAMA TORU
MARUYAMA JUNYA
TSURUME TAKUYA
Application Number:
JP2011134989A
Publication Date:
October 06, 2011
Filing Date:
June 17, 2011
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
G09F9/00; H01L29/786; H01L21/336; H01L21/762; H01L21/77; H01L21/84; H01L27/12; H01L51/56; H01L21/02; H01L27/32; H01L51/52
Domestic Patent References:
JP2002287662A2002-10-04
JPH11242238A1999-09-07
JP2003280035A2003-10-02
JP2003163337A2003-06-06
JP2003289136A2003-10-10
JP2003142666A2003-05-16
JP2003195787A2003-07-09
JP2003174153A2003-06-20