To provide a structure of a semiconductor device which can suppress hysteresis caused by a charge trap while reducing an interface level, and to provide a method of manufacturing the same.
The semiconductor device 200 includes a substrate (a semiconductor substrate 100) having a semiconductor layer 101 containing GaN on at least a part of its surface, a first gate insulation layer (an Al2O3 film 114) arranged on the semiconductor substrate 100 to be in contact with the semiconductor layer 101 and formed of an metal oxide layer containing no nitrogen but Al, a second gate insulation layer (an SiO2 film 116) arranged on the Al2O3 film 114 and containing Si and O, and a gate electrode 118 arranged on the SiO2 film 116. A lower surface of the gate electrode 118 is in contact with the SiO2 film 116. A thickness of the Al2O3 film 114 is smaller than that of the SiO2 film 116.
TANAKA MASAYASU
Kana Nomoto
Satoshi Amagi