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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2012221973
Kind Code:
A
Abstract:

To manufacture a module of an integrated circuit using a large-capacity capacitor in a smaller size while suppressing increase in cost.

There is provided a semiconductor device comprising: an integrated circuit substrate 101 in which an integrated circuit is formed on a semiconductor substrate; and a capacitor substrate 102 including a stacked capacitor connected to the integrated circuit substrate 101 by being stacked thereon. The capacitor substrate 102 may be stacked on a side on which the integrated circuit of the integrated circuit substrate 101 is formed, and may be stacked on a side of the semiconductor substrate of the integrated circuit of the integrated circuit substrate 101.


Inventors:
TSUTSUMI TAKUYA
SUGITANI SUEHIRO
NISHIMURA KAZUMI
IDA MINORU
Application Number:
JP2011082565A
Publication Date:
November 12, 2012
Filing Date:
April 04, 2011
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L25/00
Domestic Patent References:
JP2007184324A2007-07-19
JPH06333740A1994-12-02
JP2011035124A2011-02-17
JP2006041061A2006-02-09
Other References:
JPN6014003161; 堤  卓也  Takuya  Tsutsumi: '側面コンタクトを用いたスタック型MIMキャパシタの高周波特性' 電子情報通信学会2010年エレクトロニクスソサイエティ大会講演論文集2  PROCEEDINGS OF THE 2010 IEIC , 20100917, p.54
JPN6014003162; 堤  卓也  T.   Tsutsumi: '新スタック型MIMキャパシタ  New stack-type MIM capacitor' 2010年春季第57回応用物理学関係連合講演会講演予稿集 19a-TS-11, 20100331, p.14-104
CSNJ201110026054; 堤  卓也  Takuya  Tsutsumi: '側面コンタクトを用いたスタック型MIMキャパシタの高周波特性' 電子情報通信学会2010年エレクトロニクスソサイエティ大会講演論文集2  PROCEEDINGS OF THE 2010 IEIC , 20100917, p.54
CSNC201108002777; 堤  卓也  T.   Tsutsumi: '新スタック型MIMキャパシタ  New stack-type MIM capacitor' 2010年春季第57回応用物理学関係連合講演会講演予稿集 19a-TS-11, 20100331, p.14-104
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike