Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2013045925
Kind Code:
A
Abstract:
To provide a heterostructure pn junction into which electrons are injected without being obstructed.
There is provided a semiconductor device comprising at least: an n-type nitride semiconductor layer 101 formed of a nitride semiconductor containing Ga; and a p-type silicon layer 102 formed of p-type silicon formed by being bonded to the nitride semiconductor layer 101. The nitride semiconductor layer 101 and the p-type silicon layer 102 are bonded via a joint interface 103.
Inventors:
SHIGEKAWA NAOTERU
IDA MINORU
AKEYOSHI TOMOYUKI
HIGURE EIJI
IDA MINORU
AKEYOSHI TOMOYUKI
HIGURE EIJI
Application Number:
JP2011183432A
Publication Date:
March 04, 2013
Filing Date:
August 25, 2011
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
UNIV TOKYO
UNIV TOKYO
International Classes:
H01L29/861; B23K20/00; H01L21/02; H01L21/205; H01L21/331; H01L29/737; H01L29/868
Domestic Patent References:
| JP2003249642A | 2003-09-05 |
Foreign References:
| WO2005029588A1 | 2005-03-31 |
Other References:
JPN6014038241; Ｔａｄａｔｏｍｏ Ｓｕｇａ， Ｔｓｕｇｕｈａｒｕ Ｗａｋａｍａｔｓｕ， Ｍａｓａｔａｋｅ Ａｋａｉｋｅ， Ａｋｉｔｓｕ Ｓｈｉｇｅｔｏｕ， Ｅｉｊｉ Ｈｉｇｕｒａｓｈｉ: 'Ｆｅａｓｉｂｉｌｉｔｙ ｏｆ ＳＡＢ ｕｓｉｎｇ Ｎａｎｏ-ａｄｈｅｓｉｏｎ Ｌａｙｅｒ ｆｏｒ Ｌｏｗ Ｔｅｍｐｅｒａｔｕｒｅ ＧａＮ Ｗａｆｅｒ Ｂｏｎｄｉｎｇ' ２００７ Ｅｌｅｃｔｒｏｎｉｃ Ｃｏｍｐｏｎｅｎｔｓ ａｎｄ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏｎｆｅｒｅｎｃｅ ＥＣＴＣ '０７． Ｐｒｏｃｅｅｄｉｎｇｓ． ５７ｔｈ, 2007, Ｐ． １&
JPN7014002661; Ｅｉｊｉ Ｈｉｇｕｒａｓｈｉ， Ｙｕｉｃｈｉｒｏ Ｔｏｋｕｄａ， Ｍａｓａｔａｋｅ Ａｋａｉｋｅ， ａｎｄ Ｔａｄａｔｏｍｏ Ｓｕｇａ: 'Ｒｏｏｍ ｔｅｍｐｅｒａｔｕｒｅ ＧａＮ-ＧａＡｓ ｄｉｒｅｃｔ ｂｏｎｄｉｎｇ ｂｙ ａｒｇｏｎ-ｂｅａｍ ｓｕｒｆａｃｅ ａｃｔｉｖａｔｉｏｎ' Ｐｒｏｃ． ｏｆ ＳＰＩＥ Ｖｏｌ． ６７１７, 2007, ｐ． ６７１７０Ｌ-１ - ６７１７０Ｌ-８, ＳＰＩＥ
JPN7014002661; Ｅｉｊｉ Ｈｉｇｕｒａｓｈｉ， Ｙｕｉｃｈｉｒｏ Ｔｏｋｕｄａ， Ｍａｓａｔａｋｅ Ａｋａｉｋｅ， ａｎｄ Ｔａｄａｔｏｍｏ Ｓｕｇａ: 'Ｒｏｏｍ ｔｅｍｐｅｒａｔｕｒｅ ＧａＮ-ＧａＡｓ ｄｉｒｅｃｔ ｂｏｎｄｉｎｇ ｂｙ ａｒｇｏｎ-ｂｅａｍ ｓｕｒｆａｃｅ ａｃｔｉｖａｔｉｏｎ' Ｐｒｏｃ． ｏｆ ＳＰＩＥ Ｖｏｌ． ６７１７, 2007, ｐ． ６７１７０Ｌ-１ - ６７１７０Ｌ-８, ＳＰＩＥ
Attorney, Agent or Firm:
Masaki Yamakawa
Shigeki Yamakawa
Yuzo Koike
Shigeki Yamakawa
Yuzo Koike