Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2015005681
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To miniaturize a power semiconductor device while securing high heat radiation performance and the electrical conduction property of a conductor in which a large current flows.SOLUTION: A semiconductor device 101 of the present invention comprises: a main wiring 11a that is formed on a surface of an insulating substrate 102 in which a semiconductor chip 1 provided with a semiconductor element is embedded into an insulating resin 4 and is connected through vias 5a, 5b, and 5c to a main electrode (electrode pad 16) of the semiconductor chip 1; a sub wiring 11b that is formed on a surface of the insulating substrate 102 and is connected through a via 5d to a sub electrode (electrode pad 15) of the semiconductor chip 1; and a metal plate 9a connected by a conductive adhesive 8 to a surface of the main wiring 11a. The wiring width of the sub wiring 11b has a narrower interval than the wiring width of the main wiring 11a.
Inventors:
UCHIUMI SHIGERU
Application Number:
JP2013131289A
Publication Date:
January 08, 2015
Filing Date:
June 24, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L25/07; H01L23/36; H01L25/18; H05K1/02; H05K3/40; H05K3/42
Domestic Patent References:
| JP2012216576A | 2012-11-08 | |||
| JP2012028700A | 2012-02-09 |
Foreign References:
| WO2012133098A1 | 2012-10-04 | |||
| WO2011102134A1 | 2011-08-25 |
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka 岑 student
Keigo Murakami
Kenji Yoshizawa
Takenaka 岑 student
Keigo Murakami
Kenji Yoshizawa