Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP3839281
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the oxidation of a lower electrode by heat treatment for crystallizing the capacity insulation film of an information storage capacity element and improving the quality of the film.
SOLUTION: After forming the lower electrode consisting of an Ru film on the sidewall and the bottom of a hole in a silicon oxide film, where a capacitive element for storing information is formed, tantalum oxide films which are a capacity insulating film are piled by a CVD method. In order to improve the film quality of this tantalum oxide, the tantalum oxide is heat-treated, while controlling the partial pressure ratio of H2O to H2 to be positioned in an area surrounded by a graph (a) and a graph (c), shown by Figure 15 in the mixed atmosphere of H2O (water vapor) and H2 (hydrogen). As a result, the film quality of the tantalum oxide film is improved, while preventing oxidation of the Ru film constituting the lower electrode.
Inventors:
SUZUKI Masayasu
Application Number:
JP2001204167A
Publication Date:
November 01, 2006
Filing Date:
July 05, 2001
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
C23C16/40; H01L21/316; H01L21/8242; H01L27/108; H01L21/02; H01L21/314; (IPC1-7): H01L21/316; C23C16/40; H01L21/8242; H01L27/108
Domestic Patent References:
| JP11238858A | ||||
| JP2000243921A | ||||
| JP2001111007A |
Attorney, Agent or Firm:
Yamato Tsutsui
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