半導体装置および半導体装置の製造方法

Title:

半導体装置および半導体装置の製造方法

Document Type and Number:

Japanese Patent JP7120334

Kind Code:

B2

Abstract:

A semiconductor device according to the present invention includes a substrate, a plurality of semiconductor layers to be overlaid on the substrate and a gate electrode, a drain electrode, and a source electrode provided on the plurality of semiconductor layers, wherein each of the plurality of semiconductor layers includes a channel layer made with GaN and a barrier layer provided in contact with an upper surface of the channel layer and made with AlxGa1-xN, and a carbon concentration of the channel layer included in an uppermost semiconductor layer among the plurality of semiconductor layers is lower than an average value of carbon concentration of the channel layer included in the at least one semiconductor layer other than the uppermost semiconductor layer among the plurality of semiconductor layers.

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Inventors:

Ryohei Nonoda
Atsushi Mera

Application Number:

JP2020570234A

Publication Date:

August 17, 2022

Filing Date:

February 05, 2019

Export Citation:

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Assignee:

Mitsubishi Electric Corporation

International Classes:

H01L21/338; H01L21/205; H01L29/778; H01L29/812

Domestic Patent References:

JP2008211089A
JP2016213507A
JP2015060896A

Foreign References:

WO2016143381A1
US20050285098
WO2016039177A1

Attorney, Agent or Firm:

Patent Attorney Takada / Takahashi International Patent Office

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