Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7173312
Kind Code:
B2
Abstract:
Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.
Inventors:
Hiroshi Takishita
Yoshimura
Meguro Misaki
Michio Nemoto
Yoshimura
Meguro Misaki
Michio Nemoto
Application Number:
JP2021519510A
Publication Date:
November 16, 2022
Filing Date:
May 15, 2020
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/265; H01L21/336; H01L21/8234; H01L27/06; H01L27/088; H01L29/06; H01L29/739; H01L29/861; H01L29/868
Domestic Patent References:
| JP2012023327A | ||||
| JP2017028250A |
Foreign References:
| WO2014208404A1 | ||||
| WO2013073623A1 |
Other References:
キャノシス株式会社,シリコンウェハー規格表,インターネット, [検索日 2022.6.3],日本,第1頁,
Attorney, Agent or Firm:
Patent Attorney Corporation RYUKA International Patent Office