Title:
SEMICONDUCTOR DEVICE AND METHOD OF SIMULATING ELECTRIC CHARACTERISTICS OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3940591
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve reliability of simulation of electric characteristics of a semiconductor device by means of thermal analysis.
SOLUTION: The semiconductor device comprises a transistor Tr5 to be analyzed, and peripheral transistors Tr1-Tr4 and Tr6-Tr9, which are arranged as mirror images of the transistor to be analyzed, wherein thermal insulation boundary conditions of heat conduction equation are established around the transistor Tr5 to be analyzed by applying a predetermined voltage to the peripheral transistors Tr1-Tr4 and Tr6-Tr9. It becomes possible to appraise the boundary conditions from a difference of measured values of the peripheral transistors under on/off conditions.
Inventors:
Youichi Hayashi
Application Number:
JP2001362591A
Publication Date:
July 04, 2007
Filing Date:
November 28, 2001
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
G01R31/26; H01L21/8234; H01L21/336; H01L27/088; H01L29/00; H01L29/78; (IPC1-7): H01L21/8234; G01R31/26; H01L21/336; H01L27/088; H01L29/00; H01L29/78
Domestic Patent References:
| JP7335844A | ||||
| JP2000036582A | ||||
| JP58107648A | ||||
| JP2000260973A | ||||
| JP10189963A | ||||
| JP2001291723A | ||||
| JP6176113A |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Atsuko Oaku
Tamaki Otsuka
Hideki Takahashi
Atsuko Oaku
Tamaki Otsuka