Title:
SEMICONDUCTOR DEVICE AND METHOD OF SWITCHING THE SAME
Document Type and Number:
Japanese Patent JP2018107318
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of switching the same capable of reducing a switching loss caused by a tail current.SOLUTION: A semiconductor device includes: a base region 3 formed on a surface layer part of a semiconductor substrate 2; an emitter region 4 formed on a surface layer part of the base region 3 at an interval from the circumference of the base region 3; a collector region 5 formed on the base layer part of the semiconductor substrate 2 at an interval from the base region 3; a gate oxide film 7 formed on a surface at the surface layer part side, of the semiconductor substrate 2; a gate electrode 8 formed on the gate oxide film 7, and at least opposed to a part between the circumference of the base region 3 and the emitter region 4; an emitter electrode 10 connected with the emitter region 4; a collector electrode 11 connected with the collector region 5; an insulating film 12 formed on a surface at the base layer part side, of the semiconductor substrate 2, and contacted with the semiconductor substrate 2; and a capacitor electrode 13 formed on the insulating film 12.SELECTED DRAWING: Figure 1
Inventors:
HIROTSU JUICHI
OBUCHI KOJI
OBUCHI KOJI
Application Number:
JP2016253461A
Publication Date:
July 05, 2018
Filing Date:
December 27, 2016
Export Citation:
Assignee:
DAIHATSU MOTOR CO LTD
International Classes:
H01L29/739; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L27/088; H01L29/78
Attorney, Agent or Firm:
Yuichi Minagawa
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