Title:
SEMICONDUCTOR DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP3123921
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an IGFET which can be changed in threshold after the IGFET is manufactured.
SOLUTION: Source-drain areas 2 are formed on a single-crystal silicon substrate 1. A gate oxide film 4, a floating gate electrode 5, a gate oxide film 6, a first control gate electrode 7, a gate oxide film 8, second control gate electrode 9, and an insulating film 10 are formed in this order on a channel area 3 formed between the source-drain areas 2. When the threshold voltage is raised, a prescribed amount of hot electrons are injected into the floating gate electrode 5. The hot electrons can be injected into the electrode 5 when the potential at the first control gate electrode 7 is made higher than that at the second control gate electrode 9. When the threshold voltage is lowered in the negative direction, a prescribed amount of hot electrons are injected into the electrode 5. The hot electrons can be injected into the electrode 5 when the potential at the second control gate electrode 9 is made higher than that at the first control gate electrode 7.
Inventors:
Hideaki Fujiwara
Application Number:
JP10001196A
Publication Date:
January 15, 2001
Filing Date:
April 22, 1996
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L21/8247; G11C16/04; G11C16/10; G11C16/16; H01L21/336; H01L27/115; H01L29/423; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP57130473A | ||||
| JP6350097A |
Attorney, Agent or Firm:
Hironobu Onda