To provide a semiconductor device wherein electric charge accumulated at a substrate side does not cause the deterioration of a transistor and the like even if a semiconductor process such as a plasma CVD method or an ion implantation method is carried out at the surface side of an insulating substrate and to provide an optoelectric device and a projection-type display device.

In a TFT array substrate 10 for a liquid crystal device, a base film 12 formed on the surface of an insulating substrate 11 has a two-layered structure of a base conductive film 121 made of an aluminum film, and the like formed on the nearly entire surface of the insulating substrate 11 and a base insulating film 122 consisting of a silicon oxide film and the like formed on the nearly entire surface of the base conductive film 121. Therefore, the generation of defects caused by a charge-up can be prevented in two stages for manufacturing the TFT array substrate 10, and a reflection type liquid crystal device can be constructed by only using the TFT array substrate 10.