Title:
SEMICONDUCTOR DEVICE FOR PHOTOELECTRIC CONVERSION
Document Type and Number:
Japanese Patent JPS5976481
Kind Code:
A
Abstract:
PURPOSE:To obtain the titled device having no decrease of conversion efficiency by blocking the reaction generated between an Al and the following semiconductor layer by a method wherein the second photo transmitting conductive film whose main constituent is In oxide is interposed between an Al metallic film and an amorphous semiconductor layer for generating photovoltage which is positioned at the side of light incidence, when this film is formed on the side opposite to the side of light incidence. CONSTITUTION:The first photo transmitting conductive film 2 whose main constituent is Sn oxide is adhered on a photo transmitting substrate 1 composed of a glass, etc. by plasma vapor growing method, and the amorphous semiconductor layer 3 having a P-I-N structure of P type, I type, and N type is formed thereon. Next, a back electrode 6 composed of an Al is adhered thereon; thereat, the second photo transmitting conductive film 5 whose constituent is In oxide doped with Sn oxide at 10wt% or less is interposed between an N type layer constituting the layer 3 and the electrode 6. Or, the film 5 of an In oxide containing phosphorus oxide at 1.3wt% or less is inserted in place thereof, and thus a light 10 is made to come to the side of the substrate 1, thereby generating a reflected light 10' thereat.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP18805582A
Publication Date:
May 01, 1984
Filing Date:
October 25, 1982
Export Citation:
Assignee:
HANDOTAI ENERGY KENKYUSHO
International Classes:
H01L31/0224; H01L31/04; H01L31/06; H01L31/075; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS55108780A | 1980-08-21 | |||
| JPS53120394A | 1978-10-20 |
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