Title:
半導体装置、電力変換装置及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7207512
Kind Code:
B2
Abstract:
To provide a semiconductor device that can be manufactured easily, in which the variation in threshold voltage can be reduced while reducing the on voltage, a power conversion device, and a manufacturing method for the semiconductor device.SOLUTION: A p-type base layer 3 is formed on a front surface of an n-type semiconductor substrate 1. On the p-type base layer 3, an n-type emitter layer 5 is formed. A trench gate 7 penetrates the p-type base layer 3 and the n-type emitter layer 5. An n-type carrier accumulation layer 14 with higher concentration than the n-type semiconductor substrate 1 is formed between the n-type semiconductor substrate 1 and the p-type base layer 3. The p-type collector 16 is formed on a back surface of the n-type semiconductor substrate 1. In the n-type carrier accumulation layer 14, the concentration gradient from the position with the peak concentration to the back surface side of the n-type semiconductor substrate 1 is higher than the concentration gradient from the position with the peak concentration to the p-type base layer 3 and the impurity concentration gradually decreases from the position with the peak concentration to the p-type base layer 3. As the impurities, protons are injected.SELECTED DRAWING: Figure 1
Inventors:
Kenji Suzuki
Application Number:
JP2021201504A
Publication Date:
January 18, 2023
Filing Date:
December 13, 2021
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/265; H01L29/78; H01L21/266; H01L21/336; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| JP2014007254A | ||||
| JP2007311627A | ||||
| JP2011139061A | ||||
| JP2014165306A |
Foreign References:
| WO2018030444A1 | ||||
| WO2016042954A1 | ||||
| WO2014199465A1 | ||||
| WO2017187670A1 |
Attorney, Agent or Firm:
Patent Attorney Takada / Takahashi International Patent Office