SEMICONDUCTOR DEVICE PROVIDED WITH SEMICONDUCTOR CIRCUIT COMPOSED OF SEMICONDUCTOR ELEMENT AND ITS MANUFACTURE

Japanese Patent JP2000058839

A

To obtain a semiconductor device provided with a semiconductor circuit composed of semiconductor elements which enhances TFT characteristics and has uniform characteristics, by a method wherein an interface between a region constituting an active layer, in particular a channel formation region, and a gate insulated film is formed superiorly, and its manufacture.

A catalytic element promoting a crystallization is annexed on a substrate 100 or an underlayer film 10, and an early semiconductor film is continuously formed on a first gate insulated film 102a, and next, after the early semiconductor film is crystallized by irradiation of infrared beams or ultraviolet beams (laser beams) via the first gate insulated film 102a, it is patterned to obtain an active layer and the first gate insulated film 102a having a desirable shape. Then, a second gate insulated film 102c is formed.

WO/2004/059682	LOW-TEMPERATURE FORMATION METHOD FOR EMITTER TIP INCLUDING COPPER OXIDE NANOWIRE OR COPPER OXIDE NANOWIRE OR COPPER NANOWIRE AND DISPLAY DEVICE OR LIGHT SOURCE HAVING EMITTER TIP MANUFACTURED USING THE SAME
WO/2003/026034	TRANSISTOR ASSEMBLY AND METHOD FOR THE PRODUCTION THEREOF
WO/2005/093806	SEMICONDUCTOR MANUFACTURING EQUIPMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

YAMAZAKI SHUNPEI
ADACHI HIROKI
KUWABARA HIDEAKI

JP22198698A

February 25, 2000

August 05, 1998

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SEMICONDUCTOR ENERGY LAB

H01L21/00; H01L21/20; H01L29/786; H01L21/336; H01L21/77; H01L21/84; H01L27/12; (IPC1-7): H01L29/786; H01L21/336

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