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Title:
SEMICONDUCTOR DEVICE PROVIDED WITH FIELD EFFECT TRANSISTORS IN SILICON-ON-INSULATOR STRUCTURE
Document Type and Number:
Japanese Patent JP2011228677
Kind Code:
A
Abstract:

To provide a novel semiconductor device provided with a plurality of field effect transistors (FET) in a silicon-on-insulator (SOI) structure.

A semiconductor device has a substrate 200, an oxide layer 190 over the substrate and a semiconductor layer 230 over the oxide layer, field effect transistors (FET) of a semiconductor-on-insulator (SeOI) structure, particularly a silicon-on-insulator (SOI) structure, wherein a channel area 200 is provided in the substrate and a dielectric, which is at least part of a BOX structured oxide layer 190 of the FET structure, serves as a gate dielectric and the substrate 200 serves as a channel.


Inventors:
CARLOS MAZUR
RICHARD FERRAN
VICHI EN GUEN
Application Number:
JP2011000073029
Publication Date:
November 10, 2011
Filing Date:
March 29, 2011
Export Citation:
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Assignee:
SOI TEC SILICON ON INSULATOR TECNOLOGIES
International Classes:
H01L27/088; H01L21/336; H01L21/8234; H01L21/8247; H01L27/08; H01L27/10; H01L27/115; H01L29/786; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Ikeda adult
Kazuhiro Yamaguchi
Masakazu Noda