Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7367856
Kind Code:
B2
Abstract:
Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lower surface region of a first conductivity type or a second conductivity type, wherein a shallowest doping concentration peak closest to the lower surface of the semiconductor substrate among the doping concentration peaks of the buffer region is a concentration peak of a hydrogen donor having a concentration higher than the other doping concentration peaks, and a ratio A/B of a peak concentration A of the shallowest doping concentration peak and an average peak concentration B of the other doping concentration peaks is 200 or less.
Inventors:
Misaki Uchida
Hisashi Yoshimura
Hiroshi Takishita
Genki Kubouchi
Michio Nemoto
Hisashi Yoshimura
Hiroshi Takishita
Genki Kubouchi
Michio Nemoto
Application Number:
JP2022512697A
Publication Date:
October 24, 2023
Filing Date:
April 01, 2021
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/336; H01L21/265; H01L21/322; H01L21/8234; H01L27/06; H01L29/06; H01L29/739; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP2013138172A |
Foreign References:
| WO2017047276A1 | ||||
| WO2017047285A1 | ||||
| WO2007055352A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation RYUKA International Patent Office