Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7368121
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type embedded in the semiconductor layer, a first trench and a second trench formed in the semiconductor layer such that the first trench and the second trench penetrate the second semiconductor layer, a first insulating film formed on at least a side surface of the first trench, a second insulating film formed on at least a side surface of the second trench, a first sinker layer of the second conductivity type formed in a first portion of the semiconductor layer, a second sinker layer of the second conductivity type formed in the first portion of the semiconductor layer, a diode impurity region of the first conductivity type which is formed on the first surface of the semiconductor layer and forms a Zener diode by pn junction between the first sinker layer and the diode impurity region, a first wiring electrically connected to the diode impurity region, and a second wiring electrically connected to the second sinker layer.
Inventors:
Yasushi Hamazawa
Application Number:
JP2019114393A
Publication Date:
October 24, 2023
Filing Date:
June 20, 2019
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L21/329; H01L21/822; H01L21/8234; H01L27/04; H01L27/06; H01L29/861; H01L29/866; H01L29/868
Domestic Patent References:
| JP2011233772A | ||||
| JP2017108051A | ||||
| JP2013089677A | ||||
| JP62014476A | ||||
| JP2009277756A | ||||
| JP2002043586A | ||||
| JP2006041476A |
Foreign References:
| US20130082768 | ||||
| US20160276447 |
Attorney, Agent or Firm:
Patent Attorney Corporation Ai Patent Office