To provide a semiconductor device and a test method thereof, for achieving a high-speed test at a desired operating frequency.
An SiP 101 includes a logic chip 103A and a memory chip 103B. The memory chip 103B includes a memory circuit to be tested.The logic chip 103A includes an internal logic circuit 20 and a test processing circuit 21 electrically connected thereto. The test processing circuit 21 is connected with an access terminal of the memory circuit to test the memory circuit by supplying a test signal input from an external terminal 23n. The test processing circuit 21 has a high-speed test control circuit for adjusting a signal delay, and supplies in the high-speed test at an actual operating speed, the test signal supplied from the external terminal 23n to the access terminal through the high-speed test control circuit.
JP2002231000 | SEMICONDUCTOR MEMORY |
JPH05250900 | SEMICONDUCTOR INTEGRATED CIRCUIT WITH TEST FUNCTION |
JP2011090778 | SEMICONDUCTOR MEMORY |
HASHIZUME YUMIKO
NISHINO TATSUHIRO
IKEDA KOJI
JPH09311160A | 1997-12-02 | |||
JPH0676566A | 1994-03-18 | |||
JP2004158098A | 2004-06-03 | |||
JP2002329395A | 2002-11-15 | |||
JP2003077296A | 2003-03-14 | |||
JP2000111618A | 2000-04-21 | |||
JP4949707B2 | 2012-06-13 |
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