Title:
非晶質酸化物を利用した半導体デバイス
Document Type and Number:
Japanese Patent JP5053537
Kind Code:
B2
Abstract:
To provide a semiconductor device and a circuit utilizing a transparent oxide film.
A semiconductor device comprises a P-type region and an N-type region. For the N-type region, an amorphous oxide having an electron carrier concentration of less than 1018/cm3or an amorphous oxide showing a tendency of the electron mobility to increase as the electron carrier concentration increases is used. The semiconductor device comprises a first region which consists of an amorphous oxide having an electron carrier concentration of less than 1018/cm3or an amorphous oxide showing a tendency of the electron mobility to increase as the electron carrier concentration increases, and a second region forming a heterojunction to the first region.
COPYRIGHT: (C)2006,JPO&NCIPI
Inventors:
Abe Katsumi
Hideo Hosono
Toshio Kamiya
Kenji Nomura
Application Number:
JP2005325370A
Publication Date:
October 17, 2012
Filing Date:
November 09, 2005
Assignee:
Canon Inc
National University Corporation Tokyo Institute of Technology
International Classes:
H01L27/04; H01L21/337; H01L21/338; H01L21/822; H01L21/8244; H01L27/10; H01L27/11; H01L29/24; H01L29/47; H01L29/786; H01L29/808; H01L29/812; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| JP2000228516A | | | | |
| JP2004103957A | | | | |
| JP2004128028A | | | | |
| JP2002289859A | | | | |
| JP5251705A | | | | |
| JP200044236A | | | | |
| JP2002319682A | | | | |
Attorney, Agent or Firm:
Okabe
Shinichi Usui
Takao Ochi
Teruhisa Motomiya
Norimichi Takanashi
Asahi Shinmitsu
Seiichiro Takahashi
Koji Yoshizawa
Takao Matsui
Tsuneo Kobayashi
Masami Saito
Katsumi Miyama
Ikuo Fujino
Takao Ochi
Teruhisa Motomiya
Norimichi Takanashi
Asahi Shinmitsu
Seiichiro Takahashi
Koji Yoshizawa
Takao Matsui
Tsuneo Kobayashi
Masami Saito
Katsumi Miyama
