Title:
SEMICONDUCTOR DEVICE WITH HIGH BREKDOWN VOLTAGE
Document Type and Number:
Japanese Patent JPS5230386
Kind Code:
A
Abstract:
PURPOSE:To obtain a bevel type semiconductor device with a high breakdown voltage with a high working efficiency in a process.
Inventors:
YASUDA YASUMICHI
TANAKA TOMOYUKI
TANAKA TOMOYUKI
Application Number:
JP10605275A
Publication Date:
March 08, 1977
Filing Date:
September 03, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/73; H01L21/31; H01L21/331; H01L21/68; H01L23/10; H01L29/06; H01L29/74; H01L29/861; (IPC1-7): H01L21/31; H01L21/68; H01L23/10; H01L29/06