SEMICONDUCTOR DEVICE

Japanese Patent JP2000208635

A

To provide a semiconductor device with a fuse structure, wherein a laser irradiated at copper fuse melting gives less damage to a silicon substrate at the lower part of copper fuse.

With a light-absorbing layer 4 of such material as of higher light absorptivity than a copper wiring layer provided at the upper part of a copper fuse layer 3, the light absorbed in the light absorbing layer 4 is conveyed to a copper wiring layer below the light absorbing layer 4 by thermal conduction, and further is conveyed to a barrier metal layer below it, for melting of a copper fuse even when a widely used infrared region wavelength laser is used. With a guard layer provided under the fuse layer 3, the damages to a silicon substrate, which arises at irradiating visible region wavelength laser, are suppressed, so that a copper fuse is melted even with a visible region wavelength laser with high light absorptivity with respect to copper.

IDO YASUHIRO
IWAMOTO TAKESHI
TOYODA RUI

JP1064799A

July 28, 2000

January 19, 1999

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MITSUBISHI ELECTRIC CORP

H01L21/3205; H01L21/82; H01L21/822; H01L23/52; H01L23/525; H01L27/04; H01L27/10; H01L23/532; (IPC1-7): H01L21/82; H01L21/3205; H01L27/04; H01L21/822; H01L27/10

Mamoru Takada (1 person outside)

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