To provide a small size semiconductor device superior in reflow resistance, temperature cycle property and PCT resistance enough to meet the demand for high degree of integration, high density and high speed processing rate constitutions.
In the semiconductor device having at least one stress buffer layer on semiconductor elements with formed electrode pads, a conductor part on the stress buffer layer, another conductor part for making conduction of the electrode pads with that conductor part through through-holes piercing the stress buffer layer between the electrode pads and the conductor part, outer electrodes on the conductor part, and a conductor part protecting layer on the stress buffer layer and the conductor part, except the regions where the outer electrodes exist, the stress buffer layer contains an epoxy resin solid at 25°C and a cross-linking acrylonitrile butadiene rubber having carboxyl groups.
OGINO MASAHIKO
SEGAWA MASANORI
MIWA TAKAO
NAGAI AKIRA
YAGUCHI AKIHIRO
ANJO ICHIRO
NISHIMURA ASAO
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