To provide a semiconductor device whose material is silicon carbide and which hardly generates oscillations in a voltage and a current at the time of a switching operation.

For instance, in the case of a silicon carbide Schottky barrier diode, a p-type region 104 is provided on the side of an ohmic cathode electrode 103. By providing the p-type region, carriers are injected from the p-type region into a reverse current between an anode and a cathode at off-switching and recoupled with the carriers carrying the reverse current. That is, the change in the number of the carriers in an n-type region at the time of the switching operation is suppressed. As a result, the fluctuation in the resistance components and capacitance components is suppressed, and the semiconductor device which hardly generates vibrations in the voltage and the current at switching operation is obtained. Also, in the case of a silicon carbide MESFET, the similar effect is obtained, if the p-type region is provided on a source electrode side.