Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003282735
Kind Code:
A
Abstract:
To provide a semiconductor device in which a capacity between wirings of adjacent bit lines can be reduced.
The semiconductor device writes data in a memory cell having a storage capacity. The semiconductor device adopts a multilayer structure to divide a layer for forming the bit line into a plurality of layers, and disposes a bit line 7B formed of an upper layer formed on a bit line 7A formed of a lower layer at a substantially center between the bit lines 7A and 7A formed of the lower layers.
Inventors:
KABASAWA TAKASHI
YAMAGUCHI MAMORU
SHIMADA YOSHIYUKI
YAMAGUCHI MAMORU
SHIMADA YOSHIYUKI
Application Number:
JP2002088327A
Publication Date:
October 03, 2003
Filing Date:
March 27, 2002
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L21/3205; H01L21/8242; H01L23/52; H01L27/108; (IPC1-7): H01L21/8242; H01L21/3205; H01L27/108
Attorney, Agent or Firm:
Masano Shibano