SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2003332579

Kind Code:

A

Abstract:

To provide a semiconductor device that can be suppressed easily in characteristic variation caused by substrate floating effects even when the thickness of a semiconductor layer is reduced without increasing a device area.

In this semiconductor device, a semiconductor layer 3 formed on an embedded insulating film 2 has a first-conductivity body region 10, a second-conductivity source region 9a, and second-conductivity drain regions 8 and 9b, and a channel is formed in the body region 10 between the drain regions 8 and 9b. The source region 9a is formed to a depth not reaching the embedded insulating film 2 in the semiconductor layer 3 and has a source electrode 12a embedded in the semiconductor layer 3 so that the electrode 12a reaches the body region 10 between the source region 9a and the insulating film 2 through the source region 9a.

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Inventors:

NOGUCHI RURIKO

Application Number:

JP2002131573A

Publication Date:

November 21, 2003

Filing Date:

May 07, 2002

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L21/28; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/28; H01L21/336

Attorney, Agent or Firm:

Takahisa Sato

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