Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006216664
Kind Code:
A
Abstract:
To provide a semiconductor device which can effect the area reduction of a semiconductor device and a high integration, etc. while the reduction of an impedance is intended.
The example of one configuration of the semiconductor device includes a semiconductor substrate 1, and signal wiring 3. The signal wiring 3 is arranged above the semiconductor substrate 1. Moreover, the silicide formation of the part of the semiconductor substrate 1 which counters the signal wiring 3 is performed according to the profile of the signal wiring 3 (that is, a silicide part 1a is formed).
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Inventors:
HIRAMA TETSUYA
SATO HISAYASU
SATO HISAYASU
Application Number:
JP2005026269A
Publication Date:
August 17, 2006
Filing Date:
February 02, 2005
Export Citation:
Assignee:
RENESAS TECH CORP
International Classes:
H01L23/52; H01L21/3205; H01L21/822; H01L27/04
Domestic Patent References:
| JPH0283953A | 1990-03-26 | |||
| JP2003224189A | 2003-08-08 |
Attorney, Agent or Firm:
Shigeaki Yoshida
Yoshitake Hidetoshi
Takahiro Arita
Yoshitake Hidetoshi
Takahiro Arita
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