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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2010056504
Kind Code:
A
Abstract:

To provide a semiconductor device using a semiconductor and an organic material as active roles and having completely new functions different from those in the prior art.

An organic electrode 2 is formed on a GaN semiconductor 1, and an Au film 3 is formed on the organic electrode 2. On the rear surface of the GaN semiconductor 1, an electrode formed of a multilayer metal film of a Ti film 4 and an Au film 5 is formed so as to oppose the organic electrode 2. The interface of bonding between the organic electrode 2 and the GaN semiconductor 1 is in a state such as schottky junction, and a rectification action is generated between them.


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Inventors:
NAKAHARA TAKESHI
YUJI HIROYUKI
AKASAKA SHUNSUKE
KAWASAKI MASASHI
OTOMO AKIRA
TSUKASAKI ATSUSHI
FUKUMURA TOMOAKI
NAKANO MASANORI
Application Number:
JP2008269073A
Publication Date:
March 11, 2010
Filing Date:
October 17, 2008
Export Citation:
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Assignee:
ROHM CO LTD
UNIV TOHOKU
International Classes:
H01L31/10
Domestic Patent References:
JP2008244006A2008-10-09
JP2005019446A2005-01-20
JP2008060312A2008-03-13
JP2004214547A2004-07-29
JPS62190779A1987-08-20
JP2003023175A2003-01-24
JP2005206409A2005-08-04
JP2007123588A2007-05-17
Other References:
JPN6010026042; Ｍ．Ｎａｋａｎｏ　ｅｔ　ａｌ．: '"Ｓｃｈｏｔｔｋｙ　ｃｏｎｔａｃｔ　ｏｎ　ａ　ＺｎＯ　（０００１）　ｓｉｎｇｌｅ　ｃｒｙｓｔａｌ　ｗｉｔｈ　ｃｏｎｄｕｃｔｉｎｇ　ｐｏｌｙｍｅｒ"' Ａｐｐｌｉｅｄ　Ｐｈｙｓｉｃｓ　Ｌｅｔｔｅｒｓ　（１　Ｏｃｔ　２００７） Ｖｏｌ．９１，　Ｎｏ．１４, 2007, １４２１１３
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Hiroyuki Miyoshi
Ichitaro Ito



 
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