Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011100995
Kind Code:
A
Abstract:

To provide a semiconductor device typified by a display device having more excellent display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and adverse effects such as voltage drop, a defect in signal writing to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented.

The semiconductor device may have a structure where a wiring with low resistance is connected to a thin-film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin-film transistor using the oxide semiconductor may be surrounded by insulating films to be sealed.


Inventors:
YAMAZAKI SHUNPEI
KOYAMA JUN
TAKAHASHI MASAHIRO
KISHIDA HIDEYUKI
MIYANAGA SHOJI
NAKAMURA YASUO
SUGAO ATSUHEI
UOJI HIDEKI
Application Number:
JP2010226669A
Publication Date:
May 19, 2011
Filing Date:
October 06, 2010
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; G02F1/1368; G09F9/00; G09F9/30; H01L21/28; H01L21/336; H05B44/00
Domestic Patent References:
JP2007123861A2007-05-17
JP2006165520A2006-06-22
JP2008219008A2008-09-18
JP2009231664A2009-10-08



 
Previous Patent: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Next Patent: METHOD OF REMOVING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE