To provide a small semiconductor device that achieves low resistance and high breakdown voltage by preventing a vertical structure and a different kind of structure from adversely affecting each other even if the vertical structure and the different kind of structure are integrated with each other.
The semiconductor device 1 is equipped with: a p-substrate 21; a surface n-layer 22 formed on the surface side of the p-substrate 21; a p-base layer 31 disposed and formed on the surface side of the surface n-layer 22 and formed with a channel CH; a connection p-layer 34 formed between the p-substrate 21 and the p-base layer 31; a vertical n-layer 41 connected to the surface n-layer 22 and formed on the side face of the p-substrate 21; a source electrode 13 formed on the surface side of the p-base layer 31; a gate electrode 12 formed on the surface side of the surface n-layer 22 so as to control the channel CH; and a drain electrode 14 formed on the rear-surface side of the p-substrate 21.
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Tadashi Takahashi
Takashi Watanabe
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama