Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012138513
Kind Code:
A
Abstract:
To achieve a high integration of a semiconductor device.
A semiconductor device comprises: a semiconductor substrate 70 that is provided in an insulator and includes a semiconductor integrated circuit; a pad 90 whose top surface is exposed through an opening POP of the insulator; and a plurality of capacitors 1 each provided in a capacitor region 91 of the semiconductor substrate 70 under the pad 90. Each of the capacitors 1 is provided in the capacitor region 91 under the pad 90 so as to satisfy a predetermined coverage factor. Contacts 18A and 18G each connected to two electrodes of the capacitor 1 are provided at positions not overlapping the opening POP in a vertical direction.
Inventors:
SATO JUNPEI
Application Number:
JP2010290998A
Publication Date:
July 19, 2012
Filing Date:
December 27, 2010
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L27/04; H01L21/3205; H01L21/336; H01L21/768; H01L21/822; H01L21/8247; H01L23/522; H01L27/10; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2006505933A | 2006-02-16 | |||
| JP2000031415A | 2000-01-28 | |||
| JP2000031383A | 2000-01-28 | |||
| JPH04167449A | 1992-06-15 | |||
| JPH11186320A | 1999-07-09 | |||
| JP2002246407A | 2002-08-30 | |||
| JP2003318288A | 2003-11-07 | |||
| JP2001284537A | 2001-10-12 | |||
| JP2008021847A | 2008-01-31 |
Attorney, Agent or Firm:
Kurata Masatoshi
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen