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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012253053
Kind Code:
A
Abstract:

To provide a semiconductor device which acquires conductivity between a connection terminal and a ground probe even when the connection terminal is coated with a coating material having electrical resistivity higher than that of a basis material.

A semiconductor device comprises: a semiconductor element; connection terminals 26, 28 coated with a coating material having electrical resistivity higher than that of a basis material and connected with the semiconductor element and connected with an external member by welding; a coating material removal part 38 in which the coating material is partially removed and which is formed on a part contacting the connection terminals 26, 28 with a ground probe 46 so as to contact the ground probe with the basis material of the connection terminals 26, 28, the ground probe flowing weld current I occurring when the connection terminals 26, 28 are welded to a ground side.


Inventors:
KITANO TAKASHI
Application Number:
JP2011122070A
Publication Date:
December 20, 2012
Filing Date:
May 31, 2011
Export Citation:
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Assignee:
ASMO CO LTD
International Classes:
H01L23/50; H01L23/48; B23K15/00
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Hiroshi Fukuda