SEMICONDUCTOR DEVICE

Japanese Patent JP2013051421

A

To control a tapered shape of a contact hole in a terminal part with high accuracy.

A semiconductor device comprises: a thin film transistor including an oxide semiconductor layer 7a, a source wiring 13as and a drain electrode 13ad; and a terminal part including a first connection part 3c, a second connection part 13c and a third connection part 19c formed on the second connection part. The second connection part contacts the first connection part in a first opening provided in first and second insulation films 5,9. The third connection part 19c contacts the second connection part in a second opening provided in a protection film 15. The first opening is formed by simultaneously etching the first insulation film 5 and the second insulation film 9. The second opening is formed by etching the protection film 15 separately from the first and second insulation film. The second connection part 13c covers end faces of the first and the second insulation films in the first opening and not covers an end face of the protection film 15 in the second opening.

CHIKAMA YOSHIMASA
NISHIKI HIROHIKO
OTA AYAFUMI
MIZUNO YUJI
HARA TAKESHI
AIDA TETSUYA
SUZUKI MASAHIKO
TAKEI MICHIKO
NAKAGAWA OKIFUMI
HARUMOTO YOSHIMASA

JP2012206132A

March 14, 2013

September 19, 2012

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SHARP KK

H01L21/768; G02F1/1345; G02F1/1368; G09F9/30; H01L21/28; H01L21/336; H01L23/522; H01L29/417; H01L29/786

JP2009260323A	2009-11-05
JP2008129314A	2008-06-05
JP2008170664A	2008-07-24
JP2003179069A	2003-06-27
JP2009075385A	2009-04-09
JP2008311342A	2008-12-25
JP2001125134A	2001-05-11
JP2009224354A	2009-10-01

WO2009128424A1

2009-10-22

Seiji Okuda
Osamu Kita
Ryoji Yamashita
Akiko Miyake

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