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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013051423
Kind Code:
A
Abstract:

To improve the aperture ratio of a semiconductor device.

The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for a driver circuit, and driver circuit wiring formed of a metal. In the thin film transistor for the driver circuit, source and drain electrodes are formed of a metal, and a channel layer is formed of an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and display portion wiring formed of an oxide conductor. In the thin film transistor for the pixel, source and drain electrode layers are formed of an oxide conductor, and a semiconductor layer is formed of an oxide semiconductor. A photolithography process using a multi-tone mask can simplify a manufacturing process.


Inventors:
YAMAZAKI SHUNPEI
SAKATA JUNICHIRO
MIYAKE HIROYUKI
KUWABARA HIDEAKI
UOJI HIDEKI
Application Number:
JP2012221050A
Publication Date:
March 14, 2013
Filing Date:
October 03, 2012
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; G02F1/1345; G02F1/1368; G02F1/167; G02F1/17; G09F9/30; H01L21/8234; H01L27/08; H01L27/088; H01L51/50
Domestic Patent References:
JP2007134687A2007-05-31
JP2008124215A2008-05-29
JP2007529119A2007-10-18
JP2008281988A2008-11-20
JP2007123861A2007-05-17



 
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