To improve the aperture ratio of a semiconductor device.
The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for a driver circuit, and driver circuit wiring formed of a metal. In the thin film transistor for the driver circuit, source and drain electrodes are formed of a metal, and a channel layer is formed of an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and display portion wiring formed of an oxide conductor. In the thin film transistor for the pixel, source and drain electrode layers are formed of an oxide conductor, and a semiconductor layer is formed of an oxide semiconductor. A photolithography process using a multi-tone mask can simplify a manufacturing process.
SAKATA JUNICHIRO
MIYAKE HIROYUKI
KUWABARA HIDEAKI
UOJI HIDEKI
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