To provide a semiconductor device that allows preventing the occurrence of snapback while suppressing degradation of switching characteristics in a configuration in which an IGBT element and a freewheeling diode element are provided together on an identical semiconductor substrate.
In a semiconductor device with a configuration in which an IGBT element and a freewheeling diode element are provided together on an identical semiconductor substrate and a buffer layer is provided between a drift layer of the semiconductor substrate and a collector layer of the IGBT element, the buffer layer is configured by a first buffer layer having a higher impurity concentration than the drift layer and a second buffer layer having a lower impurity concentration than the first buffer layer, and the second buffer layer is in contact with at least a part of the collector layer.
TANABE HIROMITSU
| JPH03105977A | 1991-05-02 | |||
| JP2002314082A | 2002-10-25 | |||
| JP2012059734A | 2012-03-22 | |||
| JP2007288158A | 2007-11-01 |
Taihei Nonobe
Takanori Kubo