To provide a semiconductor device that allows improving the withstand voltage and reducing the capacitance.
A semiconductor device includes a substrate, a first conductive part, a second conductive part, a semiconductor part, a first electrode part, a second electrode part, a first insulating part, and a second insulating part. The first conductive part extends in the Z-axis direction. The second conductive part extends in the Z-axis direction and is spaced apart from the first conductive part along the X-axis direction. The semiconductor part is provided between the first conductive part and the second conductive part. The first electrode part extends in the Z-axis direction between the first conductive part and the second conductive part. The second electrode part extends in the Z-axis direction between the first electrode part and the second conductive part, and is spaced apart from the first electrode part. The first insulating part is provided between the first electrode part and the semiconductor part, and has a first thickness in the normal direction of a boundary surface of the first electrode part. The second insulating part is provided between the second electrode part and the semiconductor part, and has a second thickness thicker than the first thickness in the normal direction of a boundary surface of the second electrode part.
MISU SHINICHIRO
ARAI MASATOSHI
