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Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013153178
Kind Code:
A
Abstract:

To provide a semiconductor device with excellent light resistance in which unnecessary light-excited carriers do not occur even if light is incident to a channel portion of a semiconductor layer.

The semiconductor device includes: a gate electrode; a gate insulating layer; a first oxide semiconductor layer having a region overlapping the gate electrode via the gate insulating layer; a second oxide semiconductor layer having a region in contact with the first oxide semiconductor layer; a source electrode; and a drain electrode. The second oxide semiconductor layer has a lower conductivity than the first oxide semiconductor layer, has a region in contact with the source electrode, and has a region in contact with the drain electrode.


Inventors:
ARAI YASUYUKI
HONDA TATSUYA
AKIMOTO KENGO
KAWAMATA IKUKO
Application Number:
JP2013040529A
Publication Date:
August 08, 2013
Filing Date:
March 01, 2013
Export Citation:
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Assignee:
SEMICONDUCTOR ENERGY LAB
International Classes:
H01L29/786; H01L21/28; H01L29/417; H01L51/50; G02F1/1368
Domestic Patent References:
JP2001210864A2001-08-03
JP2001044503A2001-02-16
JP2005150635A2005-06-09
JP2005033172A2005-02-03
Foreign References:
WO2005074038A12005-08-11
WO2005088726A12005-09-22
WO2002017368A12002-02-28
Other References:
南 内嗣: "多結晶ＺｎＯの研究動向", ２００４年（平成１６年）春季　第５１回応用物理学関係連合講演会講演予稿集　第０分冊, vol. 第25ページ, JPN6014032843, March 2004 (2004-03-01), ISSN: 0002870919
野村 研二他: "ＩｎＧａＯ３（ＺｎＯ）５単結晶薄膜を用いた透明ＭＩＳＦＥＴの作製", ２００２年（平成１４年）秋季　第６３回応用物理学会学術講演会講演予稿集　第２分冊, vol. 第2分冊, JPN6013015650, 24 September 2002 (2002-09-24), pages 518, ISSN: 0002870920
南 内嗣 T. MINAMI: "多結晶ＺｎＯの研究動向 Trend of the study of polycrystalline Zn0", ２００４年（平成１６年）春季　第５１回応用物理学関係連合講演会講演予稿集　第０分冊 EXTENDED ABSTRAC, vol. 第0巻, JPN6014046774, ISSN: 0002934778
野村 研二 KENJI NOMURA: "ＩｎＧａＯ３（ＺｎＯ）５単結晶薄膜を用いた透明ＭＩＳＦＥＴの作製 Fabrication of T", ２００２年（平成１４年）秋季　第６３回応用物理学会学術講演会講演予稿集　第２分冊 EXTENDED ABSTRACTS, vol. 第2巻, JPN6014046776, ISSN: 0002934779



 
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