Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2013182993
Kind Code:
A
Abstract:
To provide a high-gain semiconductor device.
A metal ground surface is formed on the side of a substrate immediately below at least a partial region of a shield plate electrode, and the shield plate electrode short-circuited by a source electrode is arranged in the vicinity of a drain electrode. Thereby, an active layer between the gate and the drain is interposed by the ground surface from top and bottom. Thereby, a region between the drain and the gate is electrically shielded, capacitor Cgd between the gate and the drain is reduced, and increase in capacitor Cgs between the gate and the source is suppressed.
Inventors:
YAMAMURA TAKUJI
Application Number:
JP2012045372A
Publication Date:
September 12, 2013
Filing Date:
March 01, 2012
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/338; H01L21/336; H01L27/095; H01L29/06; H01L29/41; H01L29/778; H01L29/78; H01L29/812
Attorney, Agent or Firm:
Hidekazu Miyoshi
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu